Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

R. Giulian; P. Kluth; B. Johannessen; L. L. Araujo; D. J. Llewellyn; D. J. Cookson; M. C. Ridgway

doi:10.1016/j.nimb.2006.12.139

Synthesis and characterization of ion-implanted Pt nanocrystals in SiO₂

R. Giulian^*, P. Kluth, B. Johannessen, L. L. Araujo, D. J. Llewellyn, D. J. Cookson, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Pt nanocrystals (NCs) produced by ion implantation in SiO₂ films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 10¹⁶ cm^-2 and were followed by annealing in forming gas (95% N₂, 5% H₂) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	257
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.12.139
Publication status	Published - Apr 2007

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title = "Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2",

abstract = "Pt nanocrystals (NCs) produced by ion implantation in SiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 1016 cm-2 and were followed by annealing in forming gas (95% N2, 5% H2) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.",

keywords = "Ion implantation, Pt nanocrystals, SAXS, TEM",

author = "R. Giulian and P. Kluth and B. Johannessen and Araujo, {L. L.} and Llewellyn, {D. J.} and Cookson, {D. J.} and Ridgway, {M. C.}",

year = "2007",

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doi = "10.1016/j.nimb.2006.12.139",

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volume = "257",

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T1 - Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

AU - Giulian, R.

AU - Kluth, P.

AU - Johannessen, B.

AU - Araujo, L. L.

AU - Llewellyn, D. J.

AU - Cookson, D. J.

AU - Ridgway, M. C.

PY - 2007/4

Y1 - 2007/4

N2 - Pt nanocrystals (NCs) produced by ion implantation in SiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 1016 cm-2 and were followed by annealing in forming gas (95% N2, 5% H2) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.

AB - Pt nanocrystals (NCs) produced by ion implantation in SiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 1016 cm-2 and were followed by annealing in forming gas (95% N2, 5% H2) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.

KW - Ion implantation

KW - Pt nanocrystals

KW - SAXS

KW - TEM

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DO - 10.1016/j.nimb.2006.12.139

M3 - Article

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VL - 257

SP - 33

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Synthesis and characterization of ion-implanted Pt nanocrystals in SiO₂

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