@inproceedings{79ff0c173d7f4e26b00c9bf3334fb6d0,
title = "Synthesis of Ge-Sn alloys by ion implantation and pulsed laser melting: Towards a group IV direct band gap semiconductor",
abstract = "The GeSn material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5-12 at.%, depending on the level of residual compressive strain in the alloy films [1]. Such Sn concentrations can only be realized by non-equilibrium preparation techniques since the equilibrium solubility of Sn in Ge is around 0.5 at.% at room temperature [2]. In this presentation, the combination of ion implantation and pulsed laser melting (PLM) is demonstrated to be a promising alternative method to molecular beam epitaxy (MBE) and chemical vapour deposition (CVD) techniques to produce highly Sn concentrated alloys with good crystal quality.",
author = "Williams, {J. S.} and Tran, {T. T.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 ; Conference date: 10-07-2017 Through 12-07-2017",
year = "2017",
month = aug,
day = "17",
doi = "10.1109/PHOSST.2017.8012621",
language = "English",
series = "Summer Topicals Meeting Series, SUM 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Summer Topicals Meeting Series, SUM 2017",
address = "United States",
}