Synthesis of nickel disilicide quantum dots in silicon dioxide films

Jong Hwan Yoon; Robert G. Elliman

doi:10.1016/j.colsurfa.2007.05.043

Synthesis of nickel disilicide quantum dots in silicon dioxide films

Jong Hwan Yoon^*, Robert G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Nickel disilicide (NiS₂) quantum dots (QDs) have been grown in silicon-rich oxide (SiO_x) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined single-crystal NiSi₂ QDs embedded in a SiO_x matrix. It is further shown that the QDs are approximately spherical in shape and that their size can be influenced by limiting the Ni concentration. For example, QDs are shown to have diameters in the range from 5 to 25 nm for an SiO_x (x = 1.16) layer with Ni concentration of 0.1-10 at.%.

Original language	English
Pages (from-to)	365-368
Number of pages	4
Journal	Colloids and Surfaces A: Physicochemical and Engineering Aspects
Volume	313-314
DOIs	https://doi.org/10.1016/j.colsurfa.2007.05.043
Publication status	Published - 1 Feb 2008

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10.1016/j.colsurfa.2007.05.043

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title = "Synthesis of nickel disilicide quantum dots in silicon dioxide films",

abstract = "Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined single-crystal NiSi2 QDs embedded in a SiOx matrix. It is further shown that the QDs are approximately spherical in shape and that their size can be influenced by limiting the Ni concentration. For example, QDs are shown to have diameters in the range from 5 to 25 nm for an SiOx (x = 1.16) layer with Ni concentration of 0.1-10 at.%.",

keywords = "Nickel disilicide, Quantum dot, Silicon dioxide",

author = "Yoon, {Jong Hwan} and Elliman, {Robert G.}",

year = "2008",

month = feb,

day = "1",

doi = "10.1016/j.colsurfa.2007.05.043",

language = "English",

volume = "313-314",

pages = "365--368",

journal = "Colloids and Surfaces A: Physicochemical and Engineering Aspects",

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publisher = "Elsevier B.V.",

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T1 - Synthesis of nickel disilicide quantum dots in silicon dioxide films

AU - Yoon, Jong Hwan

AU - Elliman, Robert G.

PY - 2008/2/1

Y1 - 2008/2/1

N2 - Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined single-crystal NiSi2 QDs embedded in a SiOx matrix. It is further shown that the QDs are approximately spherical in shape and that their size can be influenced by limiting the Ni concentration. For example, QDs are shown to have diameters in the range from 5 to 25 nm for an SiOx (x = 1.16) layer with Ni concentration of 0.1-10 at.%.

AB - Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined single-crystal NiSi2 QDs embedded in a SiOx matrix. It is further shown that the QDs are approximately spherical in shape and that their size can be influenced by limiting the Ni concentration. For example, QDs are shown to have diameters in the range from 5 to 25 nm for an SiOx (x = 1.16) layer with Ni concentration of 0.1-10 at.%.

KW - Nickel disilicide

KW - Quantum dot

KW - Silicon dioxide

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U2 - 10.1016/j.colsurfa.2007.05.043

DO - 10.1016/j.colsurfa.2007.05.043

M3 - Article

SN - 0927-7757

VL - 313-314

SP - 365

EP - 368

JO - Colloids and Surfaces A: Physicochemical and Engineering Aspects

JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects

ER -

Synthesis of nickel disilicide quantum dots in silicon dioxide films

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