T-shaped Bi2Te3-Te heteronanojunctions: Epitaxial growth, structural modeling, and thermoelectric properties

Lina Cheng; Zhi Gang Chen; Lei Yang; Guang Han; Hong Yi Xu; G. Jeffrey Snyder; Gao Qing Lu; Jin Zou

doi:10.1021/jp4041666

T-shaped Bi₂Te₃-Te heteronanojunctions: Epitaxial growth, structural modeling, and thermoelectric properties

Lina Cheng, Zhi Gang Chen^*, Lei Yang, Guang Han, Hong Yi Xu, G. Jeffrey Snyder, Gao Qing Lu, Jin Zou

^*Corresponding author for this work

Department of Electronic Materials Engineering

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

Novel T-shaped Bi₂Te₃-Te heteronanojunctions composed of a rhombohedral structured Bi₂Te₃ nanoplate and a trigonal structured Te nanorod were fabricated by a simple and facile solvothermal method. A unique crystallographic relationship of [21̄1̄0]Bi₂Te₃/[21̄1̄0]_Te and [0001]Bi₂Te₃//[0001]_Te has been observed for this epitaxial growth. Such epitaxial nature between Bi₂Te ₃ nanoplates and Te nanorods is caused by their negligible lattice mismatches in the corresponding atomic planes. The interfaces between Bi ₂Te₃ nanoplates and Te nanorods lead to a low thermal conductivity in these heteronanojunctions, so that a promising figure of merit (ZT) value is obtained (0.73 ± 0.04 at 320 K). This study provides a new method and opportunity to engineer heteronanojunctions for high-efficiency thermoelectric devices for power generation.

Original language	English
Pages (from-to)	12458-12464
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	24
DOIs	https://doi.org/10.1021/jp4041666
Publication status	Published - 20 Jun 2013

Access to Document

10.1021/jp4041666

Cite this

@article{9bc4e378798b48ca82ab0e715d53e073,

title = "T-shaped Bi2Te3-Te heteronanojunctions: Epitaxial growth, structural modeling, and thermoelectric properties",

abstract = "Novel T-shaped Bi2Te3-Te heteronanojunctions composed of a rhombohedral structured Bi2Te3 nanoplate and a trigonal structured Te nanorod were fabricated by a simple and facile solvothermal method. A unique crystallographic relationship of [2{\=1}{\=1}0]Bi2Te3/[2{\=1}{\=1}0]Te and [0001]Bi2Te3//[0001]Te has been observed for this epitaxial growth. Such epitaxial nature between Bi2Te 3 nanoplates and Te nanorods is caused by their negligible lattice mismatches in the corresponding atomic planes. The interfaces between Bi 2Te3 nanoplates and Te nanorods lead to a low thermal conductivity in these heteronanojunctions, so that a promising figure of merit (ZT) value is obtained (0.73 ± 0.04 at 320 K). This study provides a new method and opportunity to engineer heteronanojunctions for high-efficiency thermoelectric devices for power generation.",

author = "Lina Cheng and Chen, \{Zhi Gang\} and Lei Yang and Guang Han and Xu, \{Hong Yi\} and Snyder, \{G. Jeffrey\} and Lu, \{Gao Qing\} and Jin Zou",

year = "2013",

month = jun,

day = "20",

doi = "10.1021/jp4041666",

language = "English",

volume = "117",

pages = "12458--12464",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "24",

}

TY - JOUR

T1 - T-shaped Bi2Te3-Te heteronanojunctions

T2 - Epitaxial growth, structural modeling, and thermoelectric properties

AU - Cheng, Lina

AU - Chen, Zhi Gang

AU - Yang, Lei

AU - Han, Guang

AU - Xu, Hong Yi

AU - Snyder, G. Jeffrey

AU - Lu, Gao Qing

AU - Zou, Jin

PY - 2013/6/20

Y1 - 2013/6/20

N2 - Novel T-shaped Bi2Te3-Te heteronanojunctions composed of a rhombohedral structured Bi2Te3 nanoplate and a trigonal structured Te nanorod were fabricated by a simple and facile solvothermal method. A unique crystallographic relationship of [21̄1̄0]Bi2Te3/[21̄1̄0]Te and [0001]Bi2Te3//[0001]Te has been observed for this epitaxial growth. Such epitaxial nature between Bi2Te 3 nanoplates and Te nanorods is caused by their negligible lattice mismatches in the corresponding atomic planes. The interfaces between Bi 2Te3 nanoplates and Te nanorods lead to a low thermal conductivity in these heteronanojunctions, so that a promising figure of merit (ZT) value is obtained (0.73 ± 0.04 at 320 K). This study provides a new method and opportunity to engineer heteronanojunctions for high-efficiency thermoelectric devices for power generation.

AB - Novel T-shaped Bi2Te3-Te heteronanojunctions composed of a rhombohedral structured Bi2Te3 nanoplate and a trigonal structured Te nanorod were fabricated by a simple and facile solvothermal method. A unique crystallographic relationship of [21̄1̄0]Bi2Te3/[21̄1̄0]Te and [0001]Bi2Te3//[0001]Te has been observed for this epitaxial growth. Such epitaxial nature between Bi2Te 3 nanoplates and Te nanorods is caused by their negligible lattice mismatches in the corresponding atomic planes. The interfaces between Bi 2Te3 nanoplates and Te nanorods lead to a low thermal conductivity in these heteronanojunctions, so that a promising figure of merit (ZT) value is obtained (0.73 ± 0.04 at 320 K). This study provides a new method and opportunity to engineer heteronanojunctions for high-efficiency thermoelectric devices for power generation.

UR - https://www.scopus.com/pages/publications/84879443302

U2 - 10.1021/jp4041666

DO - 10.1021/jp4041666

M3 - Article

AN - SCOPUS:84879443302

SN - 1932-7447

VL - 117

SP - 12458

EP - 12464

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 24

ER -

T-shaped Bi₂Te₃-Te heteronanojunctions: Epitaxial growth, structural modeling, and thermoelectric properties

Abstract

Access to Document

Other files and links

Fingerprint

Cite this