Tailoring the blueviolet photoluminescence from Sn-implanted SiO 2 using a two-step annealing process

F. Kremer; F. P. Luce; Z. E. Fabrim; D. F. Sanchez; R. Lang; F. C. Zawislak; P. F.P. Fichtner

doi:10.1088/0022-3727/45/9/095304

Tailoring the blueviolet photoluminescence from Sn-implanted SiO ₂ using a two-step annealing process

F. Kremer^*, F. P. Luce, Z. E. Fabrim, D. F. Sanchez, R. Lang, F. C. Zawislak, P. F.P. Fichtner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The blueviolet photoluminescence (PL) response of ion beam synthesized Sn nanoparticles (NPs) in silica is studied in samples submitted to a two-step thermal annealing process. This process consists of a low temperature and long time ageing treatment (523K, 100h) followed by a high temperature and short time one (T>773K, 0.5h). The comparison between aged and non-aged control samples by means of transmission electron microscopy observations and Rutherford backscattering spectrometry measurements demonstrates that the ageing treatment causes the formation of a more thermally stable and dense array of rather small Sn NPs. This phenomenon is correlated with the enhancement in the blueviolet PL intensity caused by the formation of luminescent defects at the NP/matrix interface region, persisting even at annealing temperatures as high as 1373K.

Original language	English
Article number	095304
Journal	Journal Physics D: Applied Physics
Volume	45
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/45/9/095304
Publication status	Published - 7 Mar 2012
Externally published	Yes

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title = "Tailoring the blueviolet photoluminescence from Sn-implanted SiO 2 using a two-step annealing process",

abstract = "The blueviolet photoluminescence (PL) response of ion beam synthesized Sn nanoparticles (NPs) in silica is studied in samples submitted to a two-step thermal annealing process. This process consists of a low temperature and long time ageing treatment (523K, 100h) followed by a high temperature and short time one (T>773K, 0.5h). The comparison between aged and non-aged control samples by means of transmission electron microscopy observations and Rutherford backscattering spectrometry measurements demonstrates that the ageing treatment causes the formation of a more thermally stable and dense array of rather small Sn NPs. This phenomenon is correlated with the enhancement in the blueviolet PL intensity caused by the formation of luminescent defects at the NP/matrix interface region, persisting even at annealing temperatures as high as 1373K.",

author = "F. Kremer and Luce, {F. P.} and Fabrim, {Z. E.} and Sanchez, {D. F.} and R. Lang and Zawislak, {F. C.} and Fichtner, {P. F.P.}",

year = "2012",

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doi = "10.1088/0022-3727/45/9/095304",

language = "English",

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T1 - Tailoring the blueviolet photoluminescence from Sn-implanted SiO 2 using a two-step annealing process

AU - Kremer, F.

AU - Luce, F. P.

AU - Fabrim, Z. E.

AU - Sanchez, D. F.

AU - Lang, R.

AU - Zawislak, F. C.

AU - Fichtner, P. F.P.

PY - 2012/3/7

Y1 - 2012/3/7

N2 - The blueviolet photoluminescence (PL) response of ion beam synthesized Sn nanoparticles (NPs) in silica is studied in samples submitted to a two-step thermal annealing process. This process consists of a low temperature and long time ageing treatment (523K, 100h) followed by a high temperature and short time one (T>773K, 0.5h). The comparison between aged and non-aged control samples by means of transmission electron microscopy observations and Rutherford backscattering spectrometry measurements demonstrates that the ageing treatment causes the formation of a more thermally stable and dense array of rather small Sn NPs. This phenomenon is correlated with the enhancement in the blueviolet PL intensity caused by the formation of luminescent defects at the NP/matrix interface region, persisting even at annealing temperatures as high as 1373K.

AB - The blueviolet photoluminescence (PL) response of ion beam synthesized Sn nanoparticles (NPs) in silica is studied in samples submitted to a two-step thermal annealing process. This process consists of a low temperature and long time ageing treatment (523K, 100h) followed by a high temperature and short time one (T>773K, 0.5h). The comparison between aged and non-aged control samples by means of transmission electron microscopy observations and Rutherford backscattering spectrometry measurements demonstrates that the ageing treatment causes the formation of a more thermally stable and dense array of rather small Sn NPs. This phenomenon is correlated with the enhancement in the blueviolet PL intensity caused by the formation of luminescent defects at the NP/matrix interface region, persisting even at annealing temperatures as high as 1373K.

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U2 - 10.1088/0022-3727/45/9/095304

DO - 10.1088/0022-3727/45/9/095304

M3 - Article

SN - 0022-3727

VL - 45

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 9

M1 - 095304

ER -

Tailoring the blueviolet photoluminescence from Sn-implanted SiO ₂ using a two-step annealing process

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