Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

Xinbo Yang*, Erkan Aydin, Hang Xu, Jingxuan Kang, Mohamed Hedhili, Wenzhu Liu, Yimao Wan, Jun Peng, Christian Samundsett, Andres Cuevas, Stefaan De Wolf

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    122 Citations (Scopus)


    Minimizing carrier recombination at contact regions by using carrier-selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high-efficiency, low-cost crystalline silicon (c-Si) solar cells. A novel electron-selective, passivating contact for c-Si solar cells is presented. Tantalum nitride (TaN x) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron-transporting and hole-blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n-type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c-Si solar cells featuring a simple full-area electron-selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier-selective contacts or electron transport layers for photovoltaic devices.

    Original languageEnglish
    Article number1800608
    JournalAdvanced Energy Materials
    Issue number20
    Publication statusPublished - 16 Jul 2018


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