Te-based chalcogenide films with high thermal stability for phase change memory

Guoxiang Wang, Xiang Shen, Qiuhua Nie*, Fen Chen, Xunsi Wang, Jing Fu, Yu Chen, Tiefeng Xu, Shixun Dai, Wei Zhang, Rongping Wang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In 2.8Bi 36.6Te 60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In 2.8Bi 36.6Te 60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10 5, implying that current consumption could be low in the phase-change memory operation.

    Original languageEnglish
    Article number093514
    JournalJournal of Applied Physics
    Issue number9
    Publication statusPublished - 1 May 2012


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