Te-based chalcogenide films with high thermal stability for phase change memory

Guoxiang Wang; Xiang Shen; Qiuhua Nie; Fen Chen; Xunsi Wang; Jing Fu; Yu Chen; Tiefeng Xu; Shixun Dai; Wei Zhang; Rongping Wang

doi:10.1063/1.4711069

Te-based chalcogenide films with high thermal stability for phase change memory

Guoxiang Wang, Xiang Shen, Qiuhua Nie^*, Fen Chen, Xunsi Wang, Jing Fu, Yu Chen, Tiefeng Xu, Shixun Dai, Wei Zhang, Rongping Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In _2.8Bi _36.6Te _60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In _2.8Bi _36.6Te _60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10 ⁵, implying that current consumption could be low in the phase-change memory operation.

Original language	English
Article number	093514
Journal	Journal of Applied Physics
Volume	111
Issue number	9
DOIs	https://doi.org/10.1063/1.4711069
Publication status	Published - 1 May 2012

Access to Document

10.1063/1.4711069

Cite this

@article{fcef30ed57774df3b2aa603319803d64,

title = "Te-based chalcogenide films with high thermal stability for phase change memory",

abstract = "This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In 2.8Bi 36.6Te 60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In 2.8Bi 36.6Te 60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10 5, implying that current consumption could be low in the phase-change memory operation.",

author = "Guoxiang Wang and Xiang Shen and Qiuhua Nie and Fen Chen and Xunsi Wang and Jing Fu and Yu Chen and Tiefeng Xu and Shixun Dai and Wei Zhang and Rongping Wang",

year = "2012",

month = may,

day = "1",

doi = "10.1063/1.4711069",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Te-based chalcogenide films with high thermal stability for phase change memory

AU - Wang, Guoxiang

AU - Shen, Xiang

AU - Nie, Qiuhua

AU - Chen, Fen

AU - Wang, Xunsi

AU - Fu, Jing

AU - Chen, Yu

AU - Xu, Tiefeng

AU - Dai, Shixun

AU - Zhang, Wei

AU - Wang, Rongping

PY - 2012/5/1

Y1 - 2012/5/1

N2 - This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In 2.8Bi 36.6Te 60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In 2.8Bi 36.6Te 60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10 5, implying that current consumption could be low in the phase-change memory operation.

AB - This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In 2.8Bi 36.6Te 60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In 2.8Bi 36.6Te 60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10 5, implying that current consumption could be low in the phase-change memory operation.

UR - http://www.scopus.com/inward/record.url?scp=84864187010&partnerID=8YFLogxK

U2 - 10.1063/1.4711069

DO - 10.1063/1.4711069

M3 - Article

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093514

ER -

Te-based chalcogenide films with high thermal stability for phase change memory

Abstract

Access to Document

Other files and links

Fingerprint

Cite this