@inproceedings{427ee4058a2246b89bf99bc521ffa813,
title = "Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon",
abstract = "Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to the data from p-type samples gives an accurate characterisation of these recombination centres in the form of two independent levels - one shallow centre near the conduction band, and one deep centre. These two levels provide a useful approximation to the distributed defect band that is known to exist in the upper band half by previous DLTS studies. In n-type silicon the situation is complicated by the Fermi-level shifting through the defect energy band with increasing temperature, altering the charge state of the precipitates, and therefore imparting a strong temperature dependence to the capture cross sections.",
author = "D. Macdonald and A. Cuevas and S. Rein and P. Lichtner and Glunz, {S. W.}",
year = "2003",
language = "English",
isbn = "4990181603",
series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",
pages = "87--90",
editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",
booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",
note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",
}