Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon

D. Macdonald*, A. Cuevas, S. Rein, P. Lichtner, S. W. Glunz

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Citations (Scopus)

    Abstract

    Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to the data from p-type samples gives an accurate characterisation of these recombination centres in the form of two independent levels - one shallow centre near the conduction band, and one deep centre. These two levels provide a useful approximation to the distributed defect band that is known to exist in the upper band half by previous DLTS studies. In n-type silicon the situation is complicated by the Fermi-level shifting through the defect energy band with increasing temperature, altering the charge state of the precipitates, and therefore imparting a strong temperature dependence to the capture cross sections.

    Original languageEnglish
    Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
    Pages87-90
    Number of pages4
    Publication statusPublished - 2003
    EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
    Duration: 11 May 200318 May 2003

    Publication series

    NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
    VolumeA

    Conference

    ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
    Country/TerritoryJapan
    CityOsaka
    Period11/05/0318/05/03

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