Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon

Engineering

• Defects 100%
• Related Defect 100%
• Silicon Wafer 50%
• Shallower 50%
• Lifetime Measurement 50%
• Fermi Level 50%
• Conduction Band 50%
• Capture Cross Section 50%
• Shockley 50%
• State of Charge 50%
• Recombination Centre 50%
• Temperature Dependence 50%
• Increasing Temperature 50%
• Energy Band 50%

Material Science

• Silicon 100%
• Single Crystal 50%
• Silicon Wafer 50%
• State-of-Charge 50%
• Deep-Level Transient Spectroscopy 50%