Temperature dependence of Auger recombination in highly injected crystalline silicon

Sisi Wang; Daniel MacDonald

doi:10.1063/1.4768900

Temperature dependence of Auger recombination in highly injected crystalline silicon

Sisi Wang^*
, Daniel MacDonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473K (-30 to 200°C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6×10^-30 cm⁶/s at 303K (30°C) at an injection level of 5×10¹⁶cm^-3. The Auger coefficient was found to decrease between 243K and 303K, and then remain approximately constant up to 473K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.

Original language	English
Article number	113708
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4768900
Publication status	Published - 1 Dec 2012

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title = "Temperature dependence of Auger recombination in highly injected crystalline silicon",

abstract = "The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473K (-30 to 200°C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6×10-30 cm6/s at 303K (30°C) at an injection level of 5×1016cm-3. The Auger coefficient was found to decrease between 243K and 303K, and then remain approximately constant up to 473K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.",

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AU - Wang, Sisi

AU - MacDonald, Daniel

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N2 - The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473K (-30 to 200°C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6×10-30 cm6/s at 303K (30°C) at an injection level of 5×1016cm-3. The Auger coefficient was found to decrease between 243K and 303K, and then remain approximately constant up to 473K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.

AB - The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection- and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473K (-30 to 200°C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6×10-30 cm6/s at 303K (30°C) at an injection level of 5×1016cm-3. The Auger coefficient was found to decrease between 243K and 303K, and then remain approximately constant up to 473K. An empirical parameterization of the measured ambipolar Auger coefficient is provided.

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U2 - 10.1063/1.4768900

DO - 10.1063/1.4768900

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VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Temperature dependence of Auger recombination in highly injected crystalline silicon

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