Temperature dependence of blistering in hydrogen implanted Si and Ge

D. J. Pyke; R. G. Elliman; J. C. McCallum

doi:10.1016/j.nimb.2012.10.037

Temperature dependence of blistering in hydrogen implanted Si and Ge

D. J. Pyke, R. G. Elliman^*, J. C. McCallum

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm^-2 using real-time imaging of samples during annealing. The time taken for blisters to form was found to exhibit Arrhenius behaviour and to be characterised by a single activation energy over the temperature range examined (375-650 °C for Si and 300-600 °C for Ge). The extracted activation energies, which are believed to be the sum of a hydrogen-complex (H-X) dissociation energy and a hydrogen migration energy, were found to be 2.28 ± 0.03 eV for (100) and (111) Si and 1.4 ± 0.03 eV for (100) Ge. These results are discussed with reference to a model for blister formation and compared with previously reported measurements. Crown

Original language	English
Pages (from-to)	29-32
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
DOIs	https://doi.org/10.1016/j.nimb.2012.10.037
Publication status	Published - 2013

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title = "Temperature dependence of blistering in hydrogen implanted Si and Ge",

abstract = "The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for blisters to form was found to exhibit Arrhenius behaviour and to be characterised by a single activation energy over the temperature range examined (375-650 °C for Si and 300-600 °C for Ge). The extracted activation energies, which are believed to be the sum of a hydrogen-complex (H-X) dissociation energy and a hydrogen migration energy, were found to be 2.28 ± 0.03 eV for (100) and (111) Si and 1.4 ± 0.03 eV for (100) Ge. These results are discussed with reference to a model for blister formation and compared with previously reported measurements. Crown",

keywords = "Blister, Germanium, Hydrogen, Silicon",

author = "Pyke, {D. J.} and Elliman, {R. G.} and McCallum, {J. C.}",

year = "2013",

doi = "10.1016/j.nimb.2012.10.037",

language = "English",

volume = "307",

pages = "29--32",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Temperature dependence of blistering in hydrogen implanted Si and Ge

AU - Pyke, D. J.

AU - Elliman, R. G.

AU - McCallum, J. C.

PY - 2013

Y1 - 2013

N2 - The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for blisters to form was found to exhibit Arrhenius behaviour and to be characterised by a single activation energy over the temperature range examined (375-650 °C for Si and 300-600 °C for Ge). The extracted activation energies, which are believed to be the sum of a hydrogen-complex (H-X) dissociation energy and a hydrogen migration energy, were found to be 2.28 ± 0.03 eV for (100) and (111) Si and 1.4 ± 0.03 eV for (100) Ge. These results are discussed with reference to a model for blister formation and compared with previously reported measurements. Crown

AB - The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for blisters to form was found to exhibit Arrhenius behaviour and to be characterised by a single activation energy over the temperature range examined (375-650 °C for Si and 300-600 °C for Ge). The extracted activation energies, which are believed to be the sum of a hydrogen-complex (H-X) dissociation energy and a hydrogen migration energy, were found to be 2.28 ± 0.03 eV for (100) and (111) Si and 1.4 ± 0.03 eV for (100) Ge. These results are discussed with reference to a model for blister formation and compared with previously reported measurements. Crown

KW - Blister

KW - Germanium

KW - Hydrogen

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84885178398&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2012.10.037

DO - 10.1016/j.nimb.2012.10.037

M3 - Article

SN - 0168-583X

VL - 307

SP - 29

EP - 32

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Temperature dependence of blistering in hydrogen implanted Si and Ge

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