Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells

Hao Feng Lu; Lan Fu; Greg Jolley; Hark Hoe Tan; Sudersena Rao Tatavarti; Chennupati Jagadish

doi:10.1109/COMMAD.2010.5699695

Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells

Hao Feng Lu, Lan Fu, Greg Jolley, Hark Hoe Tan, Sudersena Rao Tatavarti, Chennupati Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	127-128
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699695
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699695

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Lu, H. F., Fu, L., Jolley, G., Tan, H. H., Tatavarti, S. R., & Jagadish, C. (2010). Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 127-128). Article 5699695 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699695

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title = "Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells",

abstract = "Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.",

author = "Lu, {Hao Feng} and Lan Fu and Greg Jolley and Tan, {Hark Hoe} and Tatavarti, {Sudersena Rao} and Chennupati Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699695",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "127--128",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Lu, HF, Fu, L, Jolley, G, Tan, HH, Tatavarti, SR & Jagadish, C 2010, Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699695, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 127-128, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699695

Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells. / Lu, Hao Feng; Fu, Lan; Jolley, Greg et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 127-128 5699695 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells

AU - Lu, Hao Feng

AU - Fu, Lan

AU - Jolley, Greg

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AU - Tatavarti, Sudersena Rao

AU - Jagadish, Chennupati

PY - 2010

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N2 - Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.

AB - Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.

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M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 127

EP - 128

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Lu HF, Fu L, Jolley G, Tan HH, Tatavarti SR, Jagadish C. Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 127-128. 5699695. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699695

Temperature dependence of dark current properties of In-GaAs/GaAs quantum dot solar cells

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