Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

Hao Feng Lu; Lan Fu; Greg Jolley; Hark Hoe Tan; Sudersena Rao Tatavarti; Chennupati Jagadish

doi:10.1063/1.3586251

Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

Hao Feng Lu, Lan Fu, Greg Jolley, Hark Hoe Tan, Sudersena Rao Tatavarti, Chennupati Jagadish

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Self-assembled In_0.5 Ga_0.5 As/GaAs quantum dot solar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAs solar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.

Original language	English
Article number	183509
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3586251
Publication status	Published - 2 May 2011

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abstract = "Self-assembled In0.5 Ga0.5 As/GaAs quantum dot solar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAs solar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.",

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AU - Jagadish, Chennupati

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AB - Self-assembled In0.5 Ga0.5 As/GaAs quantum dot solar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAs solar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.

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Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

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