Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

L. V. Titova; Thang B. Hoang; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; Y. Kim; H. J. Joyce; H. H. Tan; C. Jagadish

doi:10.1063/1.2364885

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

L. V. Titova^*, Thang B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

171 Citations (Scopus)

Abstract

Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects.

Original language	English
Article number	173126
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364885
Publication status	Published - 2006

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title = "Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires",

abstract = "Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects.",

author = "Titova, {L. V.} and Hoang, {Thang B.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Y. Kim and Joyce, {H. J.} and Tan, {H. H.} and C. Jagadish",

year = "2006",

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language = "English",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

AU - Titova, L. V.

AU - Hoang, Thang B.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Kim, Y.

AU - Joyce, H. J.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006

Y1 - 2006

N2 - Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects.

AB - Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects.

UR - http://www.scopus.com/inward/record.url?scp=33750436198&partnerID=8YFLogxK

U2 - 10.1063/1.2364885

DO - 10.1063/1.2364885

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173126

ER -

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

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