Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. C. Johnson; B. Haberl; J. E. Bradby; J. C. McCallum; J. S. Williams

doi:10.1103/PhysRevB.83.235205

Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. C. Johnson^*, B. Haberl, J. E. Bradby, J. C. McCallum, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

Original language	English
Article number	235205
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.83.235205
Publication status	Published - 6 Jun 2011

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title = "Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation",

abstract = "A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.",

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doi = "10.1103/PhysRevB.83.235205",

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AU - Johnson, B. C.

AU - Haberl, B.

AU - Bradby, J. E.

AU - McCallum, J. C.

AU - Williams, J. S.

PY - 2011/6/6

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N2 - A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

AB - A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

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U2 - 10.1103/PhysRevB.83.235205

DO - 10.1103/PhysRevB.83.235205

M3 - Article

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 235205

ER -

Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

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