Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

B. C. Johnson*, B. Haberl, J. E. Bradby, J. C. McCallum, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

    Original languageEnglish
    Article number235205
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume83
    Issue number23
    DOIs
    Publication statusPublished - 6 Jun 2011

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