Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence

Hieu T. Nguyen*, Simeon C. Baker-Finch, Daniel MacDonald

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    61 Citations (Scopus)

    Abstract

    The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90-363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.

    Original languageEnglish
    Article number112105
    JournalApplied Physics Letters
    Volume104
    Issue number11
    DOIs
    Publication statusPublished - 17 Mar 2014

    Fingerprint

    Dive into the research topics of 'Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence'. Together they form a unique fingerprint.

    Cite this