Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

T. Trupke*, M. A. Green, P. Würfel, P. P. Altermatt, A. Wang, J. Zhao, R. Corkish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    254 Citations (Scopus)

    Abstract

    A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.

    Original languageEnglish
    Pages (from-to)4930-4937
    Number of pages8
    JournalJournal of Applied Physics
    Volume94
    Issue number8
    DOIs
    Publication statusPublished - 15 Oct 2003

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