Abstract
A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.
Original language | English |
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Pages (from-to) | 4930-4937 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 8 |
DOIs | |
Publication status | Published - 15 Oct 2003 |