Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

T. Trupke; M. A. Green; P. Würfel; P. P. Altermatt; A. Wang; J. Zhao; R. Corkish

doi:10.1063/1.1610231

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

T. Trupke^*
, M. A. Green
, P. Würfel
, P. P. Altermatt
, A. Wang
, J. Zhao
, R. Corkish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

276 Citations (Scopus)

Abstract

A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.

Original language	English
Pages (from-to)	4930-4937
Number of pages	8
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1610231
Publication status	Published - 15 Oct 2003

Access to Document

10.1063/1.1610231

Cite this

@article{a3c065f3bb75401da45f23bdc72bc574,

title = "Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon",

abstract = "A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.",

author = "T. Trupke and Green, \{M. A.\} and P. W{\"u}rfel and Altermatt, \{P. P.\} and A. Wang and J. Zhao and R. Corkish",

year = "2003",

month = oct,

day = "15",

doi = "10.1063/1.1610231",

language = "English",

volume = "94",

pages = "4930--4937",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

AU - Trupke, T.

AU - Green, M. A.

AU - Würfel, P.

AU - Altermatt, P. P.

AU - Wang, A.

AU - Zhao, J.

AU - Corkish, R.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.

AB - A study was performed on the determination of the radiative recombination coefficient B(T) of intrinsic crystalline silicon. It was found that the radiative recombination coefficient B(T) was determined as a function of temperature over the temperature range 77-300 K. It was shown that B(T) decreased strongly with increasing temperature.

UR - https://www.scopus.com/pages/publications/0242272427

U2 - 10.1063/1.1610231

DO - 10.1063/1.1610231

M3 - Article

SN - 0021-8979

VL - 94

SP - 4930

EP - 4937

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this