Abstract
The temperature dependence of the R1 linewidth in Al 2O3:Mn4+ is reported. Transient holes broaden rapidly from 2.5 to 40 K due to the one-phonon process between the E and 2A levels of the 2E excited state. The linewidth varies from 3 MHz at 2.5 K to 2640 GHz at 294 K and the line shifts by -1440 GHz. Above 50 K the two-phonon Raman process becomes dominant. The quadratic electron-phonon coupling constant is larger for Al2O3:Mn4+ compared to ruby, resulting in a stronger phonon sideband in Al 2O3:Mn4+. The best description of the linewidth data are yielded by a model using pseudo-local modes.
| Original language | English |
|---|---|
| Pages (from-to) | 241-244 |
| Number of pages | 4 |
| Journal | Chemical Physics Letters |
| Volume | 515 |
| Issue number | 4-6 |
| DOIs | |
| Publication status | Published - 27 Oct 2011 |
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