@inproceedings{09c708c60323422fbc50386223dde7bb,
title = "Temperature dependence of threshold switching in NbOx thin films",
abstract = "The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbOx and the IMT switching model.",
keywords = "Amorphous NbO, Non-volatile memory, Selector Device, Threshold Switching",
author = "Shuai Li and Xinjun Liu and Nandi, {Sanjoy Kumar} and Venkatachalam, {Dinesh Kumar} and Elliman, {Robert Glen}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",
year = "2014",
month = feb,
day = "10",
doi = "10.1109/COMMAD.2014.7038673",
language = "English",
series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "138--140",
editor = "Mariusz Martyniuk and Lorenzo Faraone",
booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
address = "United States",
}