Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Kun Tang; Shulin Gu; Jiandong Ye; Shimin Huang; Ran Gu; Shunming Zhu; Rong Zhang; Yi Shi; Youdou Zheng

doi:10.1063/1.4809669

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Kun Tang^*, Shulin Gu, Jiandong Ye, Shimin Huang, Ran Gu, Shunming Zhu, Rong Zhang, Yi Shi, Youdou Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.

Original language	English
Article number	221905
Journal	Applied Physics Letters
Volume	102
Issue number	22
DOIs	https://doi.org/10.1063/1.4809669
Publication status	Published - 3 Jun 2013
Externally published	Yes

Access to Document

10.1063/1.4809669

Cite this

@article{5cee23aaa56f43ca847de930b57fe192,

title = "Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films",

abstract = "The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.",

author = "Kun Tang and Shulin Gu and Jiandong Ye and Shimin Huang and Ran Gu and Shunming Zhu and Rong Zhang and Yi Shi and Youdou Zheng",

year = "2013",

month = jun,

day = "3",

doi = "10.1063/1.4809669",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

AU - Tang, Kun

AU - Gu, Shulin

AU - Ye, Jiandong

AU - Huang, Shimin

AU - Gu, Ran

AU - Zhu, Shunming

AU - Zhang, Rong

AU - Shi, Yi

AU - Zheng, Youdou

PY - 2013/6/3

Y1 - 2013/6/3

N2 - The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.

AB - The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.

UR - http://www.scopus.com/inward/record.url?scp=84879089313&partnerID=8YFLogxK

U2 - 10.1063/1.4809669

DO - 10.1063/1.4809669

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221905

ER -

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this