Temperature dependent frequency tuning of NbOx relaxation oscillators

Sanjoy Kumar Nandi; Shuai Li; Xinjun Liu; Robert G. Elliman

doi:10.1063/1.4999373

Temperature dependent frequency tuning of NbO_x relaxation oscillators

Sanjoy Kumar Nandi, Shuai Li, Xinjun Liu, Robert G. Elliman

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbO_x/TiN devices and its effect on the dynamics of associated Pearson-Anson relaxation oscillators. The voltage range over which CC-NDR is observed decreases with increasing temperature such that no NDR is observed for temperatures above ∼380 K. Up to this temperature, relaxation oscillators exhibit voltage and temperature dependent oscillation frequencies in the range of 1 to 13 MHz. Significantly, the sensitivity of the frequency to temperature changes was found to be voltage-dependent, ranging from 39.6 kHz/K at a source voltage of 2 V to 110 kHz/K at a source voltage of 3 V, in the temperature range of 296-328 K. Such a behaviour provides insights into temperature tolerance and tuning variability for environmentally sensitive neuromorphic computing.

Original language	English
Article number	202901
Journal	Applied Physics Letters
Volume	111
Issue number	20
DOIs	https://doi.org/10.1063/1.4999373
Publication status	Published - 13 Nov 2017

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@article{a97eb54a92b44ae4b20ef052b935a700,

title = "Temperature dependent frequency tuning of NbOx relaxation oscillators",

abstract = "This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbOx/TiN devices and its effect on the dynamics of associated Pearson-Anson relaxation oscillators. The voltage range over which CC-NDR is observed decreases with increasing temperature such that no NDR is observed for temperatures above ∼380 K. Up to this temperature, relaxation oscillators exhibit voltage and temperature dependent oscillation frequencies in the range of 1 to 13 MHz. Significantly, the sensitivity of the frequency to temperature changes was found to be voltage-dependent, ranging from 39.6 kHz/K at a source voltage of 2 V to 110 kHz/K at a source voltage of 3 V, in the temperature range of 296-328 K. Such a behaviour provides insights into temperature tolerance and tuning variability for environmentally sensitive neuromorphic computing.",

author = "Nandi, \{Sanjoy Kumar\} and Shuai Li and Xinjun Liu and Elliman, \{Robert G.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = nov,

day = "13",

doi = "10.1063/1.4999373",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Temperature dependent frequency tuning of NbOx relaxation oscillators

AU - Nandi, Sanjoy Kumar

AU - Li, Shuai

AU - Liu, Xinjun

AU - Elliman, Robert G.

PY - 2017/11/13

Y1 - 2017/11/13

N2 - This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbOx/TiN devices and its effect on the dynamics of associated Pearson-Anson relaxation oscillators. The voltage range over which CC-NDR is observed decreases with increasing temperature such that no NDR is observed for temperatures above ∼380 K. Up to this temperature, relaxation oscillators exhibit voltage and temperature dependent oscillation frequencies in the range of 1 to 13 MHz. Significantly, the sensitivity of the frequency to temperature changes was found to be voltage-dependent, ranging from 39.6 kHz/K at a source voltage of 2 V to 110 kHz/K at a source voltage of 3 V, in the temperature range of 296-328 K. Such a behaviour provides insights into temperature tolerance and tuning variability for environmentally sensitive neuromorphic computing.

AB - This study investigates the temperature dependence of current-controlled negative differential resistance (CC-NDR) in Pt/NbOx/TiN devices and its effect on the dynamics of associated Pearson-Anson relaxation oscillators. The voltage range over which CC-NDR is observed decreases with increasing temperature such that no NDR is observed for temperatures above ∼380 K. Up to this temperature, relaxation oscillators exhibit voltage and temperature dependent oscillation frequencies in the range of 1 to 13 MHz. Significantly, the sensitivity of the frequency to temperature changes was found to be voltage-dependent, ranging from 39.6 kHz/K at a source voltage of 2 V to 110 kHz/K at a source voltage of 3 V, in the temperature range of 296-328 K. Such a behaviour provides insights into temperature tolerance and tuning variability for environmentally sensitive neuromorphic computing.

UR - https://www.scopus.com/pages/publications/85034263382

U2 - 10.1063/1.4999373

DO - 10.1063/1.4999373

M3 - Article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202901

ER -

Temperature dependent frequency tuning of NbO_x relaxation oscillators

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