Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

Kongping Wu; Shulin Gu; Kun Tang; Jiandong Ye; Shunming Zhu; Mengran Zhou; Yourui Huang; Mingxiang Xu; Rong Zhang; Youdou Zheng

doi:10.1016/j.jmmm.2011.12.030

Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

Kongping Wu, Shulin Gu^*, Kun Tang, Jiandong Ye, Shunming Zhu, Mengran Zhou, Yourui Huang, Mingxiang Xu, Rong Zhang, Youdou Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The influences of Mn doping on the structural quality of the Zn _xMn _1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn _xMn _1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T _C should explain that the magnetic transition in field-cooled magnetization of Zn _1-xMn _xO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.

Original language	English
Pages (from-to)	1649-1654
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	324
Issue number	8
DOIs	https://doi.org/10.1016/j.jmmm.2011.12.030
Publication status	Published - Apr 2012
Externally published	Yes

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10.1016/j.jmmm.2011.12.030

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title = "Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors",

abstract = "The influences of Mn doping on the structural quality of the Zn xMn 1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn xMn 1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T C should explain that the magnetic transition in field-cooled magnetization of Zn 1-xMn xO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.",

keywords = "Diluted magnetic semiconductor, Room-temperature ferromagnetism, Zn Mn O:N",

author = "Kongping Wu and Shulin Gu and Kun Tang and Jiandong Ye and Shunming Zhu and Mengran Zhou and Yourui Huang and Mingxiang Xu and Rong Zhang and Youdou Zheng",

year = "2012",

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doi = "10.1016/j.jmmm.2011.12.030",

language = "English",

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T1 - Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

AU - Wu, Kongping

AU - Gu, Shulin

AU - Tang, Kun

AU - Ye, Jiandong

AU - Zhu, Shunming

AU - Zhou, Mengran

AU - Huang, Yourui

AU - Xu, Mingxiang

AU - Zhang, Rong

AU - Zheng, Youdou

PY - 2012/4

Y1 - 2012/4

N2 - The influences of Mn doping on the structural quality of the Zn xMn 1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn xMn 1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T C should explain that the magnetic transition in field-cooled magnetization of Zn 1-xMn xO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.

AB - The influences of Mn doping on the structural quality of the Zn xMn 1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn xMn 1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T C should explain that the magnetic transition in field-cooled magnetization of Zn 1-xMn xO:N films at low temperature is caused by the strong pd exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.

KW - Diluted magnetic semiconductor

KW - Room-temperature ferromagnetism

KW - Zn Mn O:N

UR - http://www.scopus.com/inward/record.url?scp=84855703707&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2011.12.030

DO - 10.1016/j.jmmm.2011.12.030

M3 - Article

SN - 0304-8853

VL - 324

SP - 1649

EP - 1654

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 8

ER -

Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

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