Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells

Xiaoming Wen; Jeffrey A. Davis; Lap Van Dao; Peter Hannaford; V. A. Coleman; H. H. Tan; C. Jagadish; K. Koike; S. Sasa; M. Inoue; M. Yano

doi:10.1063/1.2745264

Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells

Xiaoming Wen^*, Jeffrey A. Davis, Lap Van Dao, Peter Hannaford, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano

^*Corresponding author for this work

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Abstract

The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnOZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.

Original language	English
Article number	221914
Journal	Applied Physics Letters
Volume	90
Issue number	22
DOIs	https://doi.org/10.1063/1.2745264
Publication status	Published - 2007

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title = "Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells",

abstract = "The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnOZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.",

author = "Xiaoming Wen and Davis, {Jeffrey A.} and {Van Dao}, Lap and Peter Hannaford and Coleman, {V. A.} and Tan, {H. H.} and C. Jagadish and K. Koike and S. Sasa and M. Inoue and M. Yano",

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doi = "10.1063/1.2745264",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells

AU - Wen, Xiaoming

AU - Davis, Jeffrey A.

AU - Van Dao, Lap

AU - Hannaford, Peter

AU - Coleman, V. A.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Koike, K.

AU - Sasa, S.

AU - Inoue, M.

AU - Yano, M.

PY - 2007

Y1 - 2007

N2 - The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnOZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.

AB - The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnOZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.

UR - http://www.scopus.com/inward/record.url?scp=34249881316&partnerID=8YFLogxK

U2 - 10.1063/1.2745264

DO - 10.1063/1.2745264

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221914

ER -

Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells

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