Temperature-dependent side-facets of GaAs nanopillars

Mun Teng Soo; Kun Zheng; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Jin Zou

doi:10.1088/0268-1242/31/9/094004

Temperature-dependent side-facets of GaAs nanopillars

Mun Teng Soo, Kun Zheng^*, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Jin Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, the effect of growth temperature on the structural properties of Au-catalysed epitaxial GaAs semiconductor nanopillars grown by metal-organic chemical vapour deposition is investigated by electron microscopy. It has been found that the growth temperature plays a significant role on the evolution of side-facets of zinc-blende structured GaAs nanopillars. At a growth temperature of 550 °C, six {112} side-facets are formed; whereas at a higher growth temperature of 600 °C, six {110} side-facets are observed. It is believed that the formation of {112} side-facets is a kinetically dominated process while the formation of {110} side-facets is a thermodynamical process. Besides, the diffusion-induced nanopillar foundations present the same {112} edge side-facets regardless of the growth temperature.

Original language	English
Article number	094004
Journal	Semiconductor Science and Technology
Volume	31
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/31/9/094004
Publication status	Published - 25 Aug 2016

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@article{4a32f310066f41558c8d6205ff74cf33,

title = "Temperature-dependent side-facets of GaAs nanopillars",

abstract = "In this study, the effect of growth temperature on the structural properties of Au-catalysed epitaxial GaAs semiconductor nanopillars grown by metal-organic chemical vapour deposition is investigated by electron microscopy. It has been found that the growth temperature plays a significant role on the evolution of side-facets of zinc-blende structured GaAs nanopillars. At a growth temperature of 550 °C, six {112} side-facets are formed; whereas at a higher growth temperature of 600 °C, six {110} side-facets are observed. It is believed that the formation of {112} side-facets is a kinetically dominated process while the formation of {110} side-facets is a thermodynamical process. Besides, the diffusion-induced nanopillar foundations present the same {112} edge side-facets regardless of the growth temperature.",

keywords = "GaAs, kinetic, side-facets, temperature, thermodynamic",

author = "Soo, {Mun Teng} and Kun Zheng and Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish and Jin Zou",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = aug,

day = "25",

doi = "10.1088/0268-1242/31/9/094004",

language = "English",

volume = "31",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "9",

}

TY - JOUR

T1 - Temperature-dependent side-facets of GaAs nanopillars

AU - Soo, Mun Teng

AU - Zheng, Kun

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Zou, Jin

PY - 2016/8/25

Y1 - 2016/8/25

N2 - In this study, the effect of growth temperature on the structural properties of Au-catalysed epitaxial GaAs semiconductor nanopillars grown by metal-organic chemical vapour deposition is investigated by electron microscopy. It has been found that the growth temperature plays a significant role on the evolution of side-facets of zinc-blende structured GaAs nanopillars. At a growth temperature of 550 °C, six {112} side-facets are formed; whereas at a higher growth temperature of 600 °C, six {110} side-facets are observed. It is believed that the formation of {112} side-facets is a kinetically dominated process while the formation of {110} side-facets is a thermodynamical process. Besides, the diffusion-induced nanopillar foundations present the same {112} edge side-facets regardless of the growth temperature.

AB - In this study, the effect of growth temperature on the structural properties of Au-catalysed epitaxial GaAs semiconductor nanopillars grown by metal-organic chemical vapour deposition is investigated by electron microscopy. It has been found that the growth temperature plays a significant role on the evolution of side-facets of zinc-blende structured GaAs nanopillars. At a growth temperature of 550 °C, six {112} side-facets are formed; whereas at a higher growth temperature of 600 °C, six {110} side-facets are observed. It is believed that the formation of {112} side-facets is a kinetically dominated process while the formation of {110} side-facets is a thermodynamical process. Besides, the diffusion-induced nanopillar foundations present the same {112} edge side-facets regardless of the growth temperature.

KW - GaAs

KW - kinetic

KW - side-facets

KW - temperature

KW - thermodynamic

UR - http://www.scopus.com/inward/record.url?scp=84988369401&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/31/9/094004

DO - 10.1088/0268-1242/31/9/094004

M3 - Article

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

M1 - 094004

ER -

Temperature-dependent side-facets of GaAs nanopillars

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