Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

J. Lloyd-Hughes; E. Castro-Camus; M. D. Fraser; H. H. Tan; C. Jagadish; M. B. Johnston

doi:10.1109/CLEO.2006.4628606

Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

J. Lloyd-Hughes^*, E. Castro-Camus, M. D. Fraser, H. H. Tan, C. Jagadish, M. B. Johnston

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4628606
Publication status	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: 21 May 2006 → 26 May 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

Conference	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	21/05/06 → 26/05/06

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10.1109/CLEO.2006.4628606

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Lloyd-Hughes, J., Castro-Camus, E., Fraser, M. D., Tan, H. H., Jagadish, C., & Johnston, M. B. (2006). Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 Article 4628606 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628606

Lloyd-Hughes, J. ; Castro-Camus, E. ; Fraser, M. D. et al. / Terahertz emission and lifetime measurements of ion-implanted semiconductors : Experiment and simulation. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

@inproceedings{c6d5e40346ae43f1825adf027f5b224e,

title = "Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation",

abstract = "The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.",

author = "J. Lloyd-Hughes and E. Castro-Camus and Fraser, {M. D.} and Tan, {H. H.} and C. Jagadish and Johnston, {M. B.}",

year = "2006",

doi = "10.1109/CLEO.2006.4628606",

language = "English",

isbn = "1557528136",

series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

}

Lloyd-Hughes, J, Castro-Camus, E, Fraser, MD, Tan, HH , Jagadish, C & Johnston, MB 2006, Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4628606, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 21/05/06. https://doi.org/10.1109/CLEO.2006.4628606

Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation. / Lloyd-Hughes, J.; Castro-Camus, E.; Fraser, M. D. et al.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628606 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Terahertz emission and lifetime measurements of ion-implanted semiconductors

T2 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

AU - Lloyd-Hughes, J.

AU - Castro-Camus, E.

AU - Fraser, M. D.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Johnston, M. B.

PY - 2006

Y1 - 2006

N2 - The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

AB - The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

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U2 - 10.1109/CLEO.2006.4628606

DO - 10.1109/CLEO.2006.4628606

M3 - Conference contribution

SN - 1557528136

SN - 9781557528131

T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Y2 - 21 May 2006 through 26 May 2006

ER -

Lloyd-Hughes J, Castro-Camus E, Fraser MD, Tan HH , Jagadish C, Johnston MB. Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628606. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4628606

Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

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