The amorphization kinetics of GaAs irradiated with Si ions

R. A. Brown; J. S. Williams

doi:10.1063/1.367516

The amorphization kinetics of GaAs irradiated with Si ions

R. A. Brown^*, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The critical relationship between ion flux and substrate temperature which defines the threshold conditions for the formation of amorphous layers in GaAs at constant ion fluence is measured for the first time. At elevated temperatures, amorphous layers are formed in GaAs by a collapselike process when a critical free energy value is exceeded. The threshold conditions for amorphization are shown to be thermally activated, with an activation energy of 0.9±0.1 eV. However, specific defects and/or processes giving rise to this value are not yet known.

Original language	English
Pages (from-to)	7533-7536
Number of pages	4
Journal	Journal of Applied Physics
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.367516
Publication status	Published - 15 Jun 1998

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AB - The critical relationship between ion flux and substrate temperature which defines the threshold conditions for the formation of amorphous layers in GaAs at constant ion fluence is measured for the first time. At elevated temperatures, amorphous layers are formed in GaAs by a collapselike process when a critical free energy value is exceeded. The threshold conditions for amorphization are shown to be thermally activated, with an activation energy of 0.9±0.1 eV. However, specific defects and/or processes giving rise to this value are not yet known.

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The amorphization kinetics of GaAs irradiated with Si ions

Abstract

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