@inproceedings{fcc332cec4cb49889e1e36b2a4acf6e2,
title = "The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?",
abstract = "The boron-oxygen defect density dependence on the boron concentration is taken for granted. Here we challenge that assumption and demonstrate that it is possible to predict the recombination activity of the boron-oxygen defect without assuming that the defect density depends on the boron concentration. Our model involves a negative-U defect with one shallow level. Changes in the Fermi level leads to changes in the occupation of the boron-oxygen defect with accompanying variations in the 'effective' defect density.",
keywords = "boron-oxygen, defect, recombination, silicon",
author = "Fiacre Rougieux and Chang Sun and Mattias Juhl",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300431",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2522--2524",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
address = "United States",
}