Abstract
We report on a theoretical study of the relationship between interdiffusion and the conduction band optical absorption of In(Ga)As/GaAs quantum dots. Quantum dot geometries are progressively interdiffused based on Fick's model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dot optical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.
Original language | English |
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Article number | 123719 |
Journal | Journal of Applied Physics |
Volume | 111 |
Issue number | 12 |
DOIs | |
Publication status | Published - 15 Jun 2012 |