The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

G. Jolley*, I. McKerracher, L. Fu, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    We report on a theoretical study of the relationship between interdiffusion and the conduction band optical absorption of In(Ga)As/GaAs quantum dots. Quantum dot geometries are progressively interdiffused based on Fick's model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dot optical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.

    Original languageEnglish
    Article number123719
    JournalJournal of Applied Physics
    Volume111
    Issue number12
    DOIs
    Publication statusPublished - 15 Jun 2012

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