Abstract
The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.
Original language | English |
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Pages (from-to) | 164-168 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 175-177 |
DOIs | |
Publication status | Published - Apr 2001 |
Event | 12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 3 Sept 2000 → 8 Sept 2000 |