The direct measurement of spectral momentum densities of silicon with high energy (e, 2e) spectroscopy

C. Bowles; A. S. Kheifets; V. A. Sashin; M. Vos; E. Weigold

doi:10.1016/j.elspec.2004.05.006

The direct measurement of spectral momentum densities of silicon with high energy (e, 2e) spectroscopy

C. Bowles, A. S. Kheifets, V. A. Sashin, M. Vos^*, E. Weigold

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Electron momentum spectroscopy is a coincidence technique that measures the spectral momentum density of matter. In this paper we outline the theoretical framework underlying these measurements, give a description of the spectrometer, and show in detail the information this technique can provide for the prototypical material silicon. We present results for single crystals as well as amorphous samples, describe the influence that diffraction and inelastic multiple scattering have on these measurements. The results are compared with full-potential linear-muffin-tin-orbital (FP-LMTO) calculations (for dispersion), and many-body calculations (for line shapes).

Original language	English
Pages (from-to)	95-104
Number of pages	10
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	141
Issue number	2-3
DOIs	https://doi.org/10.1016/j.elspec.2004.05.006
Publication status	Published - Dec 2004

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10.1016/j.elspec.2004.05.006

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title = "The direct measurement of spectral momentum densities of silicon with high energy (e, 2e) spectroscopy",

abstract = "Electron momentum spectroscopy is a coincidence technique that measures the spectral momentum density of matter. In this paper we outline the theoretical framework underlying these measurements, give a description of the spectrometer, and show in detail the information this technique can provide for the prototypical material silicon. We present results for single crystals as well as amorphous samples, describe the influence that diffraction and inelastic multiple scattering have on these measurements. The results are compared with full-potential linear-muffin-tin-orbital (FP-LMTO) calculations (for dispersion), and many-body calculations (for line shapes).",

keywords = "Band structure, Electron momentum spectroscopy, Silicon, Spectral function",

author = "C. Bowles and Kheifets, {A. S.} and Sashin, {V. A.} and M. Vos and E. Weigold",

year = "2004",

month = dec,

doi = "10.1016/j.elspec.2004.05.006",

language = "English",

volume = "141",

pages = "95--104",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The direct measurement of spectral momentum densities of silicon with high energy (e, 2e) spectroscopy

AU - Bowles, C.

AU - Kheifets, A. S.

AU - Sashin, V. A.

AU - Vos, M.

AU - Weigold, E.

PY - 2004/12

Y1 - 2004/12

N2 - Electron momentum spectroscopy is a coincidence technique that measures the spectral momentum density of matter. In this paper we outline the theoretical framework underlying these measurements, give a description of the spectrometer, and show in detail the information this technique can provide for the prototypical material silicon. We present results for single crystals as well as amorphous samples, describe the influence that diffraction and inelastic multiple scattering have on these measurements. The results are compared with full-potential linear-muffin-tin-orbital (FP-LMTO) calculations (for dispersion), and many-body calculations (for line shapes).

AB - Electron momentum spectroscopy is a coincidence technique that measures the spectral momentum density of matter. In this paper we outline the theoretical framework underlying these measurements, give a description of the spectrometer, and show in detail the information this technique can provide for the prototypical material silicon. We present results for single crystals as well as amorphous samples, describe the influence that diffraction and inelastic multiple scattering have on these measurements. The results are compared with full-potential linear-muffin-tin-orbital (FP-LMTO) calculations (for dispersion), and many-body calculations (for line shapes).

KW - Band structure

KW - Electron momentum spectroscopy

KW - Silicon

KW - Spectral function

UR - http://www.scopus.com/inward/record.url?scp=8344241860&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2004.05.006

DO - 10.1016/j.elspec.2004.05.006

M3 - Article

SN - 0368-2048

VL - 141

SP - 95

EP - 104

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - 2-3

ER -

The direct measurement of spectral momentum densities of silicon with high energy (e, 2e) spectroscopy

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