The effect of a post oxidation in-situ nitrogen anneal on si surface passivation

Hao Jin; K. J. Weber; A. W. Blakers

doi:10.1109/WCPEC.2006.279326

The effect of a post oxidation in-situ nitrogen anneal on si surface passivation

Hao Jin^*, K. J. Weber, A. W. Blakers

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

The thermal stability of Si / SiO₂ stacks and Si / SiO ₂ / Si₃N₄ stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO₂ interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO₂ / Si₃N₄ stacks have a much slower depassivation rate than Si / SiO₂ stacks due to hydrogen stored in nitride layer.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1071-1073
Number of pages	3
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279326
Publication status	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

Access to Document

10.1109/WCPEC.2006.279326

Cite this

Jin, H., Weber, K. J., & Blakers, A. W. (2006). The effect of a post oxidation in-situ nitrogen anneal on si surface passivation. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1071-1073). Article 4059817 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279326

Jin, Hao ; Weber, K. J. ; Blakers, A. W. / The effect of a post oxidation in-situ nitrogen anneal on si surface passivation. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1071-1073 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{c3940cfafc35431db8e0dc0013001816,

title = "The effect of a post oxidation in-situ nitrogen anneal on si surface passivation",

abstract = "The thermal stability of Si / SiO2 stacks and Si / SiO 2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.",

author = "Hao Jin and Weber, {K. J.} and Blakers, {A. W.}",

year = "2006",

doi = "10.1109/WCPEC.2006.279326",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "1071--1073",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

address = "United States",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Jin, H, Weber, KJ & Blakers, AW 2006, The effect of a post oxidation in-situ nitrogen anneal on si surface passivation. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059817, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 1071-1073, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06. https://doi.org/10.1109/WCPEC.2006.279326

The effect of a post oxidation in-situ nitrogen anneal on si surface passivation. / Jin, Hao; Weber, K. J.; Blakers, A. W.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1071-1073 4059817 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - The effect of a post oxidation in-situ nitrogen anneal on si surface passivation

AU - Jin, Hao

AU - Weber, K. J.

AU - Blakers, A. W.

PY - 2006

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N2 - The thermal stability of Si / SiO2 stacks and Si / SiO 2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.

AB - The thermal stability of Si / SiO2 stacks and Si / SiO 2 / Si3N4 stacks with and without post oxidation in-situ anneal in nitrogen is investigated by Quasi-steady state photoconductivity decay (QSSPCD) and Electronic Paramagnetic Resonance (EPR). With in-situ annealing in nitrogen, the Si-SiO2 interface shows a reduced density of paramagnetic defects and better thermal stability. Si / SiO2 / Si3N4 stacks have a much slower depassivation rate than Si / SiO2 stacks due to hydrogen stored in nitride layer.

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U2 - 10.1109/WCPEC.2006.279326

DO - 10.1109/WCPEC.2006.279326

M3 - Conference contribution

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1071

EP - 1073

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Jin H, Weber KJ , Blakers AW. The effect of a post oxidation in-situ nitrogen anneal on si surface passivation. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1071-1073. 4059817. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279326

The effect of a post oxidation in-situ nitrogen anneal on si surface passivation

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