Abstract
A combination of electron paramagnetic resonance (EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces. EPR measurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface recombination activity by a factor of more than two, for B diffused samples with a sheet resistance of ∼250 .
Original language | English |
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Article number | 122109 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2008 |