The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

H. Jin*, W. E. Jellett, Z. Chun, K. J. Weber, A. W. Blakers, P. J. Smith

*Corresponding author for this work

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    7 Citations (Scopus)

    Abstract

    A combination of electron paramagnetic resonance (EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces. EPR measurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface recombination activity by a factor of more than two, for B diffused samples with a sheet resistance of ∼250 .

    Original languageEnglish
    Article number122109
    JournalApplied Physics Letters
    Volume92
    Issue number12
    DOIs
    Publication statusPublished - 2008

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