The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire

V. N. Gurarie; P. H. Otsuka; D. N. Jamieson; J. S. Williams; M. Conway

doi:10.1016/S0168-583X(01)01241-1

The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire

V. N. Gurarie^*, P. H. Otsuka, D. N. Jamieson, J. S. Williams, M. Conway

^*Corresponding author for this work

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Abstract

Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallographic faces is experimentally investigated. The temperature threshold of fracture is determined in both implanted and unimplanted crystals by measuring the fragment contraction on cooling from fracture temperature. Optical and SEM microscopy are used to analyse fracture morphology and thermal shock behaviour on the (0 0 0 1), (1 1̄ 0 2) and (1 1 2̄ 0) faces in sapphire crystals implanted with 70 keV Si^- ions and then subjected to thermal stress testing using pulsed plasma. The most stable crystal faces in terms of stress resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all faces tested. The (1 1̄ 0 2) face proved to be the most stable for both implanted and unimplanted crystals. The results are discussed on the basis of fracture mechanics principles and the implantation-induced crack nucleation process.

Original language	English
Pages (from-to)	751-755
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)01241-1
Publication status	Published - May 2002

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title = "The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire",

abstract = "Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallographic faces is experimentally investigated. The temperature threshold of fracture is determined in both implanted and unimplanted crystals by measuring the fragment contraction on cooling from fracture temperature. Optical and SEM microscopy are used to analyse fracture morphology and thermal shock behaviour on the (0 0 0 1), (1 {\=1} 0 2) and (1 1 {\=2} 0) faces in sapphire crystals implanted with 70 keV Si- ions and then subjected to thermal stress testing using pulsed plasma. The most stable crystal faces in terms of stress resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all faces tested. The (1 {\=1} 0 2) face proved to be the most stable for both implanted and unimplanted crystals. The results are discussed on the basis of fracture mechanics principles and the implantation-induced crack nucleation process.",

keywords = "Ceramics, Fracture, Ion implantation, Stress resistance",

author = "Gurarie, {V. N.} and Otsuka, {P. H.} and Jamieson, {D. N.} and Williams, {J. S.} and M. Conway",

year = "2002",

month = may,

doi = "10.1016/S0168-583X(01)01241-1",

language = "English",

volume = "190",

pages = "751--755",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire. / Gurarie, V. N.; Otsuka, P. H.; Jamieson, D. N. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 05.2002, p. 751-755.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire

AU - Gurarie, V. N.

AU - Otsuka, P. H.

AU - Jamieson, D. N.

AU - Williams, J. S.

AU - Conway, M.

PY - 2002/5

Y1 - 2002/5

N2 - Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallographic faces is experimentally investigated. The temperature threshold of fracture is determined in both implanted and unimplanted crystals by measuring the fragment contraction on cooling from fracture temperature. Optical and SEM microscopy are used to analyse fracture morphology and thermal shock behaviour on the (0 0 0 1), (1 1̄ 0 2) and (1 1 2̄ 0) faces in sapphire crystals implanted with 70 keV Si- ions and then subjected to thermal stress testing using pulsed plasma. The most stable crystal faces in terms of stress resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all faces tested. The (1 1̄ 0 2) face proved to be the most stable for both implanted and unimplanted crystals. The results are discussed on the basis of fracture mechanics principles and the implantation-induced crack nucleation process.

AB - Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallographic faces is experimentally investigated. The temperature threshold of fracture is determined in both implanted and unimplanted crystals by measuring the fragment contraction on cooling from fracture temperature. Optical and SEM microscopy are used to analyse fracture morphology and thermal shock behaviour on the (0 0 0 1), (1 1̄ 0 2) and (1 1 2̄ 0) faces in sapphire crystals implanted with 70 keV Si- ions and then subjected to thermal stress testing using pulsed plasma. The most stable crystal faces in terms of stress resistance are established. Ion implantation is shown to reduce the temperature threshold of fracture for all faces tested. The (1 1̄ 0 2) face proved to be the most stable for both implanted and unimplanted crystals. The results are discussed on the basis of fracture mechanics principles and the implantation-induced crack nucleation process.

KW - Ceramics

KW - Fracture

KW - Ion implantation

KW - Stress resistance

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U2 - 10.1016/S0168-583X(01)01241-1

DO - 10.1016/S0168-583X(01)01241-1

M3 - Article

SN - 0168-583X

VL - 190

SP - 751

EP - 755

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire

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