The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

B. Zhao; M. N. Lockrey; P. Caroff; N. Wang; L. Li; J. Wong-Leung; H. H. Tan; C. Jagadish

doi:10.1039/c8nr00737c

The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

B. Zhao^*, M. N. Lockrey, P. Caroff, N. Wang, L. Li, J. Wong-Leung, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD). Nitridation conditions are found to critically influence the nanorod morphology and optical properties. The nanorod polarity was determined through a direct observation of atomic dumbbell pairs. While purely N-polar wires are obtained under optimised nitridation, incomplete or missing nitridation leads to mixed polarity. By comparing the morphology and the crystal structure with spatially resolved cathodoluminescence results, our study unambiguously establishes a link between appropriate nitridation duration and a homogeneous improvement in optical quality.

Original language	English
Pages (from-to)	11205-11210
Number of pages	6
Journal	Nanoscale
Volume	10
Issue number	23
DOIs	https://doi.org/10.1039/c8nr00737c
Publication status	Published - 21 Jun 2018

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abstract = "We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD). Nitridation conditions are found to critically influence the nanorod morphology and optical properties. The nanorod polarity was determined through a direct observation of atomic dumbbell pairs. While purely N-polar wires are obtained under optimised nitridation, incomplete or missing nitridation leads to mixed polarity. By comparing the morphology and the crystal structure with spatially resolved cathodoluminescence results, our study unambiguously establishes a link between appropriate nitridation duration and a homogeneous improvement in optical quality.",

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T1 - The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

AU - Zhao, B.

AU - Lockrey, M. N.

AU - Caroff, P.

AU - Wang, N.

AU - Li, L.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2018/6/21

Y1 - 2018/6/21

N2 - We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD). Nitridation conditions are found to critically influence the nanorod morphology and optical properties. The nanorod polarity was determined through a direct observation of atomic dumbbell pairs. While purely N-polar wires are obtained under optimised nitridation, incomplete or missing nitridation leads to mixed polarity. By comparing the morphology and the crystal structure with spatially resolved cathodoluminescence results, our study unambiguously establishes a link between appropriate nitridation duration and a homogeneous improvement in optical quality.

AB - We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD). Nitridation conditions are found to critically influence the nanorod morphology and optical properties. The nanorod polarity was determined through a direct observation of atomic dumbbell pairs. While purely N-polar wires are obtained under optimised nitridation, incomplete or missing nitridation leads to mixed polarity. By comparing the morphology and the crystal structure with spatially resolved cathodoluminescence results, our study unambiguously establishes a link between appropriate nitridation duration and a homogeneous improvement in optical quality.

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DO - 10.1039/c8nr00737c

M3 - Article

SN - 2040-3364

VL - 10

SP - 11205

EP - 11210

JO - Nanoscale

JF - Nanoscale

IS - 23

ER -

The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

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