The effect of the annealing ramp rate on the formation of voids in silicon

S. Ruffell*, P. J. Simpson, A. P. Knights

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C for 30min, with ramp rates ranging from 1 to 100 °Cs-1. The residual defect distribution was probed by means of positron annihilation spectroscopy and ion channeling, with results demonstrating a strong dependence on the ramp rate. For these conditions, open-volume defects to which the positron technique is sensitive are present in significant concentrations only for annealing ramp rates greater than 5 °Cs-1.

    Original languageEnglish
    Article number466202
    JournalJournal of Physics Condensed Matter
    Volume19
    Issue number46
    DOIs
    Publication statusPublished - 21 Nov 2007

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