Abstract
We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C for 30min, with ramp rates ranging from 1 to 100 °Cs-1. The residual defect distribution was probed by means of positron annihilation spectroscopy and ion channeling, with results demonstrating a strong dependence on the ramp rate. For these conditions, open-volume defects to which the positron technique is sensitive are present in significant concentrations only for annealing ramp rates greater than 5 °Cs-1.
Original language | English |
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Article number | 466202 |
Journal | Journal of Physics Condensed Matter |
Volume | 19 |
Issue number | 46 |
DOIs | |
Publication status | Published - 21 Nov 2007 |