The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility

Xueqiong Su; Li Wang; Yi Lu; Yulin Gan; Rongping Wang

doi:10.1016/j.vacuum.2014.01.025

The effect of thermal annealing on (In₂O₃) _0.75(Ga₂O₃)_0.1(ZnO)_0.15 thin films with high mobility

Xueqiong Su, Li Wang^*, Yi Lu, Yulin Gan, Rongping Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We fabricated a series of (In₂O₃) _0.75(Ga₂O₃)_0.1(ZnO)_0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The effect of thermal annealing on the properties of In-Ga-Zn-O (IGZO) films was studied. The structural, optical and electrical properties of the films were measured by various diagnosis tools. Surface morphology of all IGZO thin films was examined by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) patterns showed that the mixed crystalline and amorphous phases appear in the as-grown film and in the films annealed temperatures from 100 °C to 300 °C. The maximum carrier mobility was 32 cm²/(V s) in the film annealed at 300 °C. The transmission spectrum of film annealed at 300 °C shows the better light transmission and narrower band gap. The IGZO thin films with high mobility and transparency are highly desirable for the fabrication of flat panel display devices.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Vacuum
Volume	107
DOIs	https://doi.org/10.1016/j.vacuum.2014.01.025
Publication status	Published - Sept 2014

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title = "The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility",

abstract = "We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The effect of thermal annealing on the properties of In-Ga-Zn-O (IGZO) films was studied. The structural, optical and electrical properties of the films were measured by various diagnosis tools. Surface morphology of all IGZO thin films was examined by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) patterns showed that the mixed crystalline and amorphous phases appear in the as-grown film and in the films annealed temperatures from 100 °C to 300 °C. The maximum carrier mobility was 32 cm2/(V s) in the film annealed at 300 °C. The transmission spectrum of film annealed at 300 °C shows the better light transmission and narrower band gap. The IGZO thin films with high mobility and transparency are highly desirable for the fabrication of flat panel display devices.",

keywords = "High mobility, IGZO film, Pulsed laser deposition, Vacuum annealed",

author = "Xueqiong Su and Li Wang and Yi Lu and Yulin Gan and Rongping Wang",

year = "2014",

month = sep,

doi = "10.1016/j.vacuum.2014.01.025",

language = "English",

volume = "107",

pages = "191--194",

journal = "Vacuum",

issn = "0042-207X",

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T1 - The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility

AU - Su, Xueqiong

AU - Wang, Li

AU - Lu, Yi

AU - Gan, Yulin

AU - Wang, Rongping

PY - 2014/9

Y1 - 2014/9

N2 - We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The effect of thermal annealing on the properties of In-Ga-Zn-O (IGZO) films was studied. The structural, optical and electrical properties of the films were measured by various diagnosis tools. Surface morphology of all IGZO thin films was examined by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) patterns showed that the mixed crystalline and amorphous phases appear in the as-grown film and in the films annealed temperatures from 100 °C to 300 °C. The maximum carrier mobility was 32 cm2/(V s) in the film annealed at 300 °C. The transmission spectrum of film annealed at 300 °C shows the better light transmission and narrower band gap. The IGZO thin films with high mobility and transparency are highly desirable for the fabrication of flat panel display devices.

AB - We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The effect of thermal annealing on the properties of In-Ga-Zn-O (IGZO) films was studied. The structural, optical and electrical properties of the films were measured by various diagnosis tools. Surface morphology of all IGZO thin films was examined by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) patterns showed that the mixed crystalline and amorphous phases appear in the as-grown film and in the films annealed temperatures from 100 °C to 300 °C. The maximum carrier mobility was 32 cm2/(V s) in the film annealed at 300 °C. The transmission spectrum of film annealed at 300 °C shows the better light transmission and narrower band gap. The IGZO thin films with high mobility and transparency are highly desirable for the fabrication of flat panel display devices.

KW - High mobility

KW - IGZO film

KW - Pulsed laser deposition

KW - Vacuum annealed

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U2 - 10.1016/j.vacuum.2014.01.025

DO - 10.1016/j.vacuum.2014.01.025

M3 - Article

SN - 0042-207X

VL - 107

SP - 191

EP - 194

JO - Vacuum

JF - Vacuum

ER -

The effect of thermal annealing on (In₂O₃) _0.75(Ga₂O₃)_0.1(ZnO)_0.15 thin films with high mobility

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