The evolution of bond structure in Ge33As12Se55 films upon thermal annealing

R. P. Wang; D. Y. Choi; A. V. Rode; B. Luther-Davies

doi:10.1016/j.jnoncrysol.2008.06.111

The evolution of bond structure in Ge₃₃As₁₂Se₅₅ films upon thermal annealing

R. P. Wang^*, D. Y. Choi, A. V. Rode, B. Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The evolution of bond structure of laser deposited Ge₃₃As₁₂Se₅₅ films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thickness of the oxidized layer was extracted for the film annealed at various pressures and temperatures.

Original language	English
Pages (from-to)	5264-5265
Number of pages	2
Journal	Journal of Non-Crystalline Solids
Volume	354
Issue number	47-51
DOIs	https://doi.org/10.1016/j.jnoncrysol.2008.06.111
Publication status	Published - 1 Dec 2008

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10.1016/j.jnoncrysol.2008.06.111

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title = "The evolution of bond structure in Ge33As12Se55 films upon thermal annealing",

abstract = "The evolution of bond structure of laser deposited Ge33As12Se55 films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thickness of the oxidized layer was extracted for the film annealed at various pressures and temperatures.",

keywords = "Chalcogenides, XPS",

author = "Wang, {R. P.} and Choi, {D. Y.} and Rode, {A. V.} and B. Luther-Davies",

year = "2008",

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doi = "10.1016/j.jnoncrysol.2008.06.111",

language = "English",

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journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - The evolution of bond structure in Ge33As12Se55 films upon thermal annealing

AU - Wang, R. P.

AU - Choi, D. Y.

AU - Rode, A. V.

AU - Luther-Davies, B.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The evolution of bond structure of laser deposited Ge33As12Se55 films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thickness of the oxidized layer was extracted for the film annealed at various pressures and temperatures.

AB - The evolution of bond structure of laser deposited Ge33As12Se55 films under various processing conditions has been investigated by X-ray photoelectron spectroscopy. It was found that a large number of Se-rich structures in the as-grown film may coalesce with As and Ge after annealing at high temperatures. In addition, both Ge and As 3d spectra show the presence of oxides. The oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thickness of the oxidized layer was extracted for the film annealed at various pressures and temperatures.

KW - Chalcogenides

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=55349106864&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2008.06.111

DO - 10.1016/j.jnoncrysol.2008.06.111

M3 - Article

SN - 0022-3093

VL - 354

SP - 5264

EP - 5265

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 47-51

ER -

The evolution of bond structure in Ge₃₃As₁₂Se₅₅ films upon thermal annealing

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