The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain

R. G. Elliman; M. J. Lederer; N. Smith; B. Luther-Davies

doi:10.1016/S0168-583X(03)00785-7

The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain

R. G. Elliman^*, M. J. Lederer, N. Smith, B. Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

26 Citations (Scopus)

Abstract

Experiments were undertaken to verify a recent claim of optical gain produced by photo-excited silicon nanocrystals. This was achieved by propagating an optical probe beam (wavelength of 800 nm) through a slab waveguide containing silicon nanocrystals and measuring this signal as the nanocrystals were optically excited by a high energy density (3.5-3500 μJ/cm²) pump beam (wavelength 355 nm). The probe signal was observed to decrease when the guide was subjected to optical pumping - no gain was observed. Indeed, the results are shown to be consistent with an excited state absorption process, in which photo-generated carriers induce 'free' carrier absorption.

Original language	English
Pages (from-to)	427-431
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00785-7
Publication status	Published - May 2003
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 1 Sept 2002 → 6 Sept 2002

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Elliman, R. G., Lederer, M. J., Smith, N., & Luther-Davies, B. (2003). The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 427-431. https://doi.org/10.1016/S0168-583X(03)00785-7

@article{e5a5e6306c8c40a8bf32a5398775c235,

title = "The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain",

abstract = "Experiments were undertaken to verify a recent claim of optical gain produced by photo-excited silicon nanocrystals. This was achieved by propagating an optical probe beam (wavelength of 800 nm) through a slab waveguide containing silicon nanocrystals and measuring this signal as the nanocrystals were optically excited by a high energy density (3.5-3500 μJ/cm2) pump beam (wavelength 355 nm). The probe signal was observed to decrease when the guide was subjected to optical pumping - no gain was observed. Indeed, the results are shown to be consistent with an excited state absorption process, in which photo-generated carriers induce 'free' carrier absorption.",

keywords = "Ion implantation, Nanocrystal, Optical gain, Silicon, Waveguide",

author = "Elliman, {R. G.} and Lederer, {M. J.} and N. Smith and B. Luther-Davies",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00785-7",

language = "English",

volume = "206",

pages = "427--431",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

}

Elliman, RG, Lederer, MJ, Smith, N & Luther-Davies, B 2003, 'The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 206, pp. 427-431. https://doi.org/10.1016/S0168-583X(03)00785-7

The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain. / Elliman, R. G.; Lederer, M. J.; Smith, N. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 05.2003, p. 427-431.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain

AU - Elliman, R. G.

AU - Lederer, M. J.

AU - Smith, N.

AU - Luther-Davies, B.

PY - 2003/5

Y1 - 2003/5

N2 - Experiments were undertaken to verify a recent claim of optical gain produced by photo-excited silicon nanocrystals. This was achieved by propagating an optical probe beam (wavelength of 800 nm) through a slab waveguide containing silicon nanocrystals and measuring this signal as the nanocrystals were optically excited by a high energy density (3.5-3500 μJ/cm2) pump beam (wavelength 355 nm). The probe signal was observed to decrease when the guide was subjected to optical pumping - no gain was observed. Indeed, the results are shown to be consistent with an excited state absorption process, in which photo-generated carriers induce 'free' carrier absorption.

AB - Experiments were undertaken to verify a recent claim of optical gain produced by photo-excited silicon nanocrystals. This was achieved by propagating an optical probe beam (wavelength of 800 nm) through a slab waveguide containing silicon nanocrystals and measuring this signal as the nanocrystals were optically excited by a high energy density (3.5-3500 μJ/cm2) pump beam (wavelength 355 nm). The probe signal was observed to decrease when the guide was subjected to optical pumping - no gain was observed. Indeed, the results are shown to be consistent with an excited state absorption process, in which photo-generated carriers induce 'free' carrier absorption.

KW - Ion implantation

KW - Nanocrystal

KW - Optical gain

KW - Silicon

KW - Waveguide

UR - http://www.scopus.com/inward/record.url?scp=0038581263&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(03)00785-7

DO - 10.1016/S0168-583X(03)00785-7

M3 - Conference article

SN - 0168-583X

VL - 206

SP - 427

EP - 431

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -

The fabrication and properties of silicon-nanocrystal-based devices and structures produced by ion implantation - The search for gain

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