The fabrication of epitaxial GexSi1-x layers by ion implantation

R. G. Elliman; W. C. Wong

doi:10.1016/0168-583X(93)90678-Y

The fabrication of epitaxial Ge_xSi_1-x layers by ion implantation

R. G. Elliman^*, W. C. Wong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial Ge_xSi_1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

Original language	English
Pages (from-to)	768-772
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90678-Y
Publication status	Published - 1993

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abstract = "Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.",

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AB - Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

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The fabrication of epitaxial Ge_xSi_1-x layers by ion implantation

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