The fabrication of epitaxial GexSi1-x layers by ion implantation

R. G. Elliman; W. C. Wong

doi:10.1016/0168-583X(93)90678-Y

The fabrication of epitaxial Ge_xSi_1-x layers by ion implantation

R. G. Elliman^*
, W. C. Wong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial Ge_xSi_1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

Original language	English
Pages (from-to)	768-772
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90678-Y
Publication status	Published - 1993

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@article{b69f1efd40414f778d8b2b7dfe430e29,

title = "The fabrication of epitaxial GexSi1-x layers by ion implantation",

abstract = "Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.",

author = "Elliman, \{R. G.\} and Wong, \{W. C.\}",

year = "1993",

doi = "10.1016/0168-583X(93)90678-Y",

language = "English",

volume = "80-81",

pages = "768--772",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "PART 2",

}

TY - JOUR

T1 - The fabrication of epitaxial GexSi1-x layers by ion implantation

AU - Elliman, R. G.

AU - Wong, W. C.

PY - 1993

Y1 - 1993

N2 - Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

AB - Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

UR - https://www.scopus.com/pages/publications/30244506114

U2 - 10.1016/0168-583X(93)90678-Y

DO - 10.1016/0168-583X(93)90678-Y

M3 - Article

AN - SCOPUS:30244506114

SN - 0168-583X

VL - 80-81

SP - 768

EP - 772

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

The fabrication of epitaxial Ge_xSi_1-x layers by ion implantation

Abstract

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