The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

K. Sears; M. Buda; H. H. Tan; C. Jagadish

doi:10.1109/LEOS.2005.1548306

The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

K. Sears^*, M. Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this presentation we will discuss the detrimental effects that low temperature grown AlGaAs cladding and waveguide layers have on MOCVD grown InAs/GaAs QD laser performance and our efforts at overcoming this problem.

Original language	English
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages	911-912
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2005.1548306
Publication status	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: 22 Oct 2005 → 28 Oct 2005

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2005
ISSN (Print)	1092-8081

Conference

Conference	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	22/10/05 → 28/10/05

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10.1109/LEOS.2005.1548306

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Sears, K., Buda, M., Tan, H. H., & Jagadish, C. (2005). The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 911-912). Article 1548306 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). https://doi.org/10.1109/LEOS.2005.1548306

@inproceedings{8ae231ce42aa439abd6bf20f8c239b4d,

title = "The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes",

abstract = "In this presentation we will discuss the detrimental effects that low temperature grown AlGaAs cladding and waveguide layers have on MOCVD grown InAs/GaAs QD laser performance and our efforts at overcoming this problem.",

author = "K. Sears and M. Buda and Tan, {H. H.} and C. Jagadish",

year = "2005",

doi = "10.1109/LEOS.2005.1548306",

language = "English",

isbn = "0780392175",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

pages = "911--912",

booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

}

Sears, K, Buda, M, Tan, HH & Jagadish, C 2005, The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005., 1548306, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2005, pp. 911-912, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 22/10/05. https://doi.org/10.1109/LEOS.2005.1548306

The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes. / Sears, K.; Buda, M.; Tan, H. H. et al.
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. 2005. p. 911-912 1548306 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jagadish, C.

PY - 2005

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AB - In this presentation we will discuss the detrimental effects that low temperature grown AlGaAs cladding and waveguide layers have on MOCVD grown InAs/GaAs QD laser performance and our efforts at overcoming this problem.

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U2 - 10.1109/LEOS.2005.1548306

DO - 10.1109/LEOS.2005.1548306

M3 - Conference contribution

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SN - 9780780392175

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

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BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

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Sears K, Buda M, Tan HH , Jagadish C. The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. 2005. p. 911-912. 1548306. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2005.1548306

The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

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