The indentation hardness of silicon measured by instrumented indentation: What does it mean?

B. Haberl*, L. B.B. Aji, J. S. Williams, J. E. Bradby

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    The indentation hardness of three different pure forms of silicon was investigated by two different methods. The hardness was probed by direct imaging of the residual impressions and by instrumented indentation using the Oliver-Pharr method. The forms of silicon used were a defective form of amorphous silicon, an amorphous form close to a continuous random network, and a crystalline silicon. The first form deforms via plastic flow and the latter two via phase transition. Two different unloading rates, fast and slow, were used to vary the phase transition behavior. This influenced the relative hardness as measured by instrumented indentation, which is not a reliable method to quantify hardness values in phase transforming materials. Thus, for our phase transforming silicon system, the relative hardness between samples can only be determined correctly by direct imaging, provided that the image accurately reveals the extent of the phase transformed volume.

    Original languageEnglish
    Pages (from-to)3066-3072
    Number of pages7
    JournalJournal of Materials Research
    Volume27
    Issue number24
    DOIs
    Publication statusPublished - 28 Dec 2012

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