The influence of cavities and point defects on boron diffusion in silicon

J. Wong-Leung*, J. S. Williams, M. Petravić

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

17 Citations (Scopus)

Abstract

Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried out into wafers containing pre-formed cavities and TED of boron was suppressed during subsequent annealing. In some cases, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient enhanced diffusion occurring.

Original languageEnglish
Pages (from-to)2418-2420
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number19
DOIs
Publication statusPublished - 1998

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