The influence of crystal orientation on surface passivation in multi-crystalline silicon

Hang Cheong Sio, Sieu Pheng Phang, Yimao Wan, Wensheng Liang, Thorsten Trupke, Sheng Cao, Dongli Hu, Yuepeng Wan, Daniel Macdonald

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Citations (Scopus)

    Abstract

    We present an approach to study the variation of the surface recombination velocity in multi-crystalline silicon wafers through photoluminescence imaging for thin, passivated and mirror polished wafers. The influence of crystal orientation on surface passivation is investigated for various passivating films, including silicon nitride and aluminum oxide. Our results show that the influence of surface orientation is negligible in well passivated multi-crystalline silicon wafers due to the detrimental effects of crystal defects. Our study on hydrogenated samples suggests that aluminum oxide passivation exhibits a similar surface dependence as native oxide passivation. A slight and different surface dependence is observed in one of the silicon nitride films used in the study.

    Original languageEnglish
    Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1770-1775
    Number of pages6
    ISBN (Print)9781479932993
    DOIs
    Publication statusPublished - 2013
    Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
    Duration: 16 Jun 201321 Jun 2013

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371

    Conference

    Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
    Country/TerritoryUnited States
    CityTampa, FL
    Period16/06/1321/06/13

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