The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Greg Jolley; Hao Feng Lu; Lan Fu; Hark Hoe Tan; Sudersena Rao Tatavarti; Chennupati Jagadish

doi:10.1109/PVSC.2011.6186006

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Greg Jolley^*, Hao Feng Lu, Lan Fu, Hark Hoe Tan, Sudersena Rao Tatavarti, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An analysis of the temperature dependent dark current and spectral response characteristics of an In _0.5Ga _0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	513-516
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2011.6186006
Publication status	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

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10.1109/PVSC.2011.6186006

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Jolley, G., Lu, H. F., Fu, L., Tan, H. H., Tatavarti, S. R., & Jagadish, C. (2011). The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 513-516). Article 6186006 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186006

@inproceedings{e2f88a5f06ad437fa9449bddceb30ee9,

title = "The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties",

abstract = "An analysis of the temperature dependent dark current and spectral response characteristics of an In 0.5Ga 0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.",

author = "Greg Jolley and Lu, {Hao Feng} and Lan Fu and Tan, {Hark Hoe} and Tatavarti, {Sudersena Rao} and Chennupati Jagadish",

year = "2011",

doi = "10.1109/PVSC.2011.6186006",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "513--516",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Jolley, G, Lu, HF, Fu, L , Tan, HH, Tatavarti, SR & Jagadish, C 2011, The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186006, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 513-516, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186006

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties. / Jolley, Greg; Lu, Hao Feng; Fu, Lan et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 513-516 6186006 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

AU - Jolley, Greg

AU - Lu, Hao Feng

AU - Fu, Lan

AU - Tan, Hark Hoe

AU - Tatavarti, Sudersena Rao

AU - Jagadish, Chennupati

PY - 2011

Y1 - 2011

N2 - An analysis of the temperature dependent dark current and spectral response characteristics of an In 0.5Ga 0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

AB - An analysis of the temperature dependent dark current and spectral response characteristics of an In 0.5Ga 0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

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U2 - 10.1109/PVSC.2011.6186006

DO - 10.1109/PVSC.2011.6186006

M3 - Conference contribution

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 513

EP - 516

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

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