The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

J. C. McCallum

doi:10.1016/S0168-583X(98)00671-5

The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

J. C. McCallum^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation. The dopant-enhanced SPE kinetics were studied in buried a-Si layers containing uniform As concentration profiles produced by multiple energy ion implantation to doses spanning the concentration range 1-28 × 10¹⁹ As/cm³ and the crystallisation rates were measured over the temperature range 460-660°C using time-resolved reflectivity. The dopant-enhanced SPE data can be modelled by an extension of the Generalised Fermi Level Shifting model (GFLS) to take into account the degenerate semiconductor statistics on the crystalline Si side of the interface and by estimating the effect of band bending at the amorphous/crystalline (a/c) interface.

Original language	English
Pages (from-to)	350-354
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00671-5
Publication status	Published - 1999
Externally published	Yes

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10.1016/S0168-583X(98)00671-5

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title = "The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers",

abstract = "The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation. The dopant-enhanced SPE kinetics were studied in buried a-Si layers containing uniform As concentration profiles produced by multiple energy ion implantation to doses spanning the concentration range 1-28 × 1019 As/cm3 and the crystallisation rates were measured over the temperature range 460-660°C using time-resolved reflectivity. The dopant-enhanced SPE data can be modelled by an extension of the Generalised Fermi Level Shifting model (GFLS) to take into account the degenerate semiconductor statistics on the crystalline Si side of the interface and by estimating the effect of band bending at the amorphous/crystalline (a/c) interface.",

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T1 - The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

AU - McCallum, J. C.

PY - 1999

Y1 - 1999

N2 - The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation. The dopant-enhanced SPE kinetics were studied in buried a-Si layers containing uniform As concentration profiles produced by multiple energy ion implantation to doses spanning the concentration range 1-28 × 1019 As/cm3 and the crystallisation rates were measured over the temperature range 460-660°C using time-resolved reflectivity. The dopant-enhanced SPE data can be modelled by an extension of the Generalised Fermi Level Shifting model (GFLS) to take into account the degenerate semiconductor statistics on the crystalline Si side of the interface and by estimating the effect of band bending at the amorphous/crystalline (a/c) interface.

AB - The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation. The dopant-enhanced SPE kinetics were studied in buried a-Si layers containing uniform As concentration profiles produced by multiple energy ion implantation to doses spanning the concentration range 1-28 × 1019 As/cm3 and the crystallisation rates were measured over the temperature range 460-660°C using time-resolved reflectivity. The dopant-enhanced SPE data can be modelled by an extension of the Generalised Fermi Level Shifting model (GFLS) to take into account the degenerate semiconductor statistics on the crystalline Si side of the interface and by estimating the effect of band bending at the amorphous/crystalline (a/c) interface.

KW - Crystallisation models

KW - Dopant-enhanced SPE

KW - Silicon

KW - Solid phase epitaxy

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DO - 10.1016/S0168-583X(98)00671-5

M3 - Article

SN - 0168-583X

VL - 148

SP - 350

EP - 354

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

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