The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

D. Carrad; A. M. Burke; D. Waddington; R. Lyttleton; H. H. Tan; P. J. Reece; O. Klochan; A. R. Hamilton; A. Rai; D. Reuter; A. D. Wieck; A. P. Micolich

doi:10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

D. Carrad, A. M. Burke, D. Waddington, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	9-10
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472334
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Access to Document

10.1109/COMMAD.2012.6472334

Cite this

Carrad, D., Burke, A. M., Waddington, D., Lyttleton, R., Tan, H. H., Reece, P. J., Klochan, O., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., & Micolich, A. P. (2012). The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 9-10). Article 6472334 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472334

@inproceedings{6e16d021bb36405fa299636fe539d307,

title = "The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures",

abstract = "Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.",

author = "D. Carrad and Burke, {A. M.} and D. Waddington and R. Lyttleton and Tan, {H. H.} and Reece, {P. J.} and O. Klochan and Hamilton, {A. R.} and A. Rai and D. Reuter and Wieck, {A. D.} and Micolich, {A. P.}",

year = "2012",

doi = "10.1109/COMMAD.2012.6472334",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "9--10",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Carrad, D, Burke, AM, Waddington, D, Lyttleton, R, Tan, HH, Reece, PJ, Klochan, O, Hamilton, AR, Rai, A, Reuter, D, Wieck, AD & Micolich, AP 2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472334, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 9-10, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. / Carrad, D.; Burke, A. M.; Waddington, D. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 9-10 6472334 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

AU - Carrad, D.

AU - Burke, A. M.

AU - Waddington, D.

AU - Lyttleton, R.

AU - Tan, H. H.

AU - Reece, P. J.

AU - Klochan, O.

AU - Hamilton, A. R.

AU - Rai, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Micolich, A. P.

PY - 2012

Y1 - 2012

N2 - Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

AB - Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

UR - http://www.scopus.com/inward/record.url?scp=84875596690&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2012.6472334

DO - 10.1109/COMMAD.2012.6472334

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 9

EP - 10

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Carrad D, Burke AM, Waddington D, Lyttleton R, Tan HH, Reece PJ et al. The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 9-10. 6472334. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this