The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

D. Carrad; A. M. Burke; D. Waddington; R. Lyttleton; H. H. Tan; P. J. Reece; O. Klochan; A. R. Hamilton; A. Rai; D. Reuter; A. D. Wieck; A. P. Micolich

doi:10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

D. Carrad
, A. M. Burke
, D. Waddington
, R. Lyttleton
, H. H. Tan
, P. J. Reece
, O. Klochan
, A. R. Hamilton
, A. Rai
, D. Reuter
, A. D. Wieck
, A. P. Micolich^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	9-10
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472334
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472334

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Carrad, D., Burke, A. M., Waddington, D., Lyttleton, R., Tan, H. H., Reece, P. J., Klochan, O., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., & Micolich, A. P. (2012). The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 9-10). Article 6472334 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472334

@inproceedings{6e16d021bb36405fa299636fe539d307,

title = "The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures",

abstract = "Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.",

author = "D. Carrad and Burke, \{A. M.\} and D. Waddington and R. Lyttleton and Tan, \{H. H.\} and Reece, \{P. J.\} and O. Klochan and Hamilton, \{A. R.\} and A. Rai and D. Reuter and Wieck, \{A. D.\} and Micolich, \{A. P.\}",

year = "2012",

doi = "10.1109/COMMAD.2012.6472334",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "9--10",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Carrad, D, Burke, AM, Waddington, D, Lyttleton, R, Tan, HH, Reece, PJ, Klochan, O, Hamilton, AR, Rai, A, Reuter, D, Wieck, AD & Micolich, AP 2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472334, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 9-10, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. / Carrad, D.; Burke, A. M.; Waddington, D. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 9-10 6472334 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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AU - Lyttleton, R.

AU - Tan, H. H.

AU - Reece, P. J.

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AU - Hamilton, A. R.

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AU - Reuter, D.

AU - Wieck, A. D.

AU - Micolich, A. P.

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N2 - Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

AB - Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

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BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

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ER -

Carrad D, Burke AM, Waddington D, Lyttleton R, Tan HH, Reece PJ et al. The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 9-10. 6472334. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472334

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

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