The paradox of compensated silicon

Andres Cuevas

doi:10.1109/COMMAD.2008.4802135

The paradox of compensated silicon

Andres Cuevas^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and donors leads to paradoxical effects on solar cell performance. While the short-circuit current is expected to decrease compared to non - compensated silicon of the same resistivity, the open-circuit voltage is predicted to increase when bulk recombination is the dominant loss mechanism. On the other hand, surface recombination is predicted to have a greater impact on compensated Si wafers and to result in a lower effective carrier lifetime. These effects are important to understand measurements of compensated Si wafers and devices.

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	238-241
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2008.4802135
Publication status	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: 28 Jul 2008 → 1 Aug 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/Territory	Australia
City	Sydney, NSW
Period	28/07/08 → 1/08/08

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10.1109/COMMAD.2008.4802135

Cite this

@inproceedings{0c3ab3554bc0403db79bc497157452d3,

title = "The paradox of compensated silicon",

abstract = "Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and donors leads to paradoxical effects on solar cell performance. While the short-circuit current is expected to decrease compared to non - compensated silicon of the same resistivity, the open-circuit voltage is predicted to increase when bulk recombination is the dominant loss mechanism. On the other hand, surface recombination is predicted to have a greater impact on compensated Si wafers and to result in a lower effective carrier lifetime. These effects are important to understand measurements of compensated Si wafers and devices.",

keywords = "Compensated silicon, Silicon solar cells",

author = "Andres Cuevas",

year = "2008",

doi = "10.1109/COMMAD.2008.4802135",

language = "English",

isbn = "9781424427178",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "238--241",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08",

note = "2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 ; Conference date: 28-07-2008 Through 01-08-2008",

}

Cuevas, A 2008, The paradox of compensated silicon. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802135, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 238-241, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 28/07/08. https://doi.org/10.1109/COMMAD.2008.4802135

The paradox of compensated silicon. / Cuevas, Andres.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 238-241 4802135 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The paradox of compensated silicon

AU - Cuevas, Andres

PY - 2008

Y1 - 2008

N2 - Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and donors leads to paradoxical effects on solar cell performance. While the short-circuit current is expected to decrease compared to non - compensated silicon of the same resistivity, the open-circuit voltage is predicted to increase when bulk recombination is the dominant loss mechanism. On the other hand, surface recombination is predicted to have a greater impact on compensated Si wafers and to result in a lower effective carrier lifetime. These effects are important to understand measurements of compensated Si wafers and devices.

AB - Compensated doping is typical of upgraded metallurgical silicon. The relatively low carrier mobility associated to high concentrations of both acceptors and donors leads to paradoxical effects on solar cell performance. While the short-circuit current is expected to decrease compared to non - compensated silicon of the same resistivity, the open-circuit voltage is predicted to increase when bulk recombination is the dominant loss mechanism. On the other hand, surface recombination is predicted to have a greater impact on compensated Si wafers and to result in a lower effective carrier lifetime. These effects are important to understand measurements of compensated Si wafers and devices.

KW - Compensated silicon

KW - Silicon solar cells

UR - http://www.scopus.com/inward/record.url?scp=64849099413&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2008.4802135

DO - 10.1109/COMMAD.2008.4802135

M3 - Conference contribution

SN - 9781424427178

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 238

EP - 241

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

Y2 - 28 July 2008 through 1 August 2008

ER -

The paradox of compensated silicon

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